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Sub-micron semiconductor devices : design and applications- [electronic resource]
Sub-micron semiconductor devices  : design and applications - [electronic resource] / edit...
Sub-micron semiconductor devices : design and applications- [electronic resource]

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자료유형  
 전자책(국외)
미국국회도서관 청구기호  
TK7871.85
자관 청구기호  
기본표목-개인명  
표제와 책임표시사항  
Sub-micron semiconductor devices : design and applications - [electronic resource] / edited by Ashish Raman, Deep Shekhar and Naveen Kumar.
판사항  
First edition.
출판 정보  
Boca Raton :CRC Press, Taylor & Francis Group2022.
형태사항  
1 online resource
서지 등 주기  
Includes bibliographical references and index.
내용주기  
완전내용Fundamental phenomena in nano scale semiconductor devices / Zeinab Ramezani and Arash Ahmadivand -- Recent advancements in growth and stability of phosphorene-prospects for high performance devices / Sushil Kumar Pandey, Vivek Garg, Nezhueyotl Izquierdo, Amitesh Kumar -- Study of transition metal dichalcogenides in junctionless transistors and effect of variation in dielectric oxide / Prateek Kumar, Maneesha Gupta, Kunwar Singh, Ashok Kumar Gupta -- GNRFET based ternary repeaters : prospects and potential implementation for efficient GNR interconnects / Afreen Khursheed and Kavita Khare -- An effective study on particulate matter (PM) removal using graphene filter / Katyayani Bhardwaj, Aryan and Ravindra Kumar Yadav -- Recent trends in fabrication of graphene-based devices for detection of heavy metal ions in water / Avik Sett, Monojit Mondal, Santanab Majumder, Tarun Kanti Bhattacharyya -- Vertical tunnel FET having dual MOSCAP geometry / Vandana Devi Wangkheirakpam, Brinda Bhowmick, Puspa Devi Pukhrambam -- Leakage current and capacitance reduction in CMOS technology / Ajay Somkuwar, Laxmi Singh -- Design of SiGe sourced gate-all-around TFET with gate-on-source for enhanced analog performance / Navaneet Kumar Singh, Rajib Kar and Durbadal Mandal -- Solving Schrodinger's equation for low dimensional nanostructures for understanding quantum confinement effects / Amit Kumar -- Simulation of reconfigurable FET circuits using Sentaurus TCAD tool / Remya Jayachandran, Rama S Komaragiri, K J Dhanaraj -- NEGF method for design and simulation analysis of nano-scale MOS devices / Chhaya Verma & Jeetendra Singh -- Performance investigation of a novel Si/Ge heterojunction asymmetric doublegate doping less tunnel field effect transistor for low-power analog/RF and IoT applications / Suruchi Sharma, Rikmantra Basu, Baljit Kaur -- Synthesis of graphene nanocomposites toward the enhancement of energy storage performance for supercapacitors / Monojit Mondal, Avik Sett, Dipak Kumar Goswami, Tarun Kanti Bhattacharyya -- Design and analysis of dopingless charge plasma based ring architecture of tunnel field effect transistor for low power application / Ashok Kumar Gupta, Ashish Raman, Prateek Kumar, Naveen Kumar, Deep Shekhar -- Hybrid intelligent technique based doping profile optimization in a double gate heterdielectric TFET / Sagarika Choudhury, Krishna Lal Baishnab, Brinda Bhowmick, Koushik Guha -- Graphene nanoribbon devices : advances in fabrication and applications / Juan M. Marmolejo-Tejada, Jaime Velasco-Medina, Andres Jaramillo-Botero -- Design and analysis of various neural preamplifier circuits / Swagata Devi, Koushik Guha, Krishna Lal Baishnab -- Design and analysis of transition metal dichalcogenides based feedback transistor / Prateek Kumar, Maneesha Gupta, Kunwar Singh, Ashok Kumar Gupta, Naveen Kumar -- Reduced graphene-metal phthalocyanine based nanohybrids for gas sensing applications / Aman Mahajan, Manreet Kaur Sohal -- Phosphorene multigate field-effect transistors for high-frequency applications / R. Ramesh, Adhithan Pon, Arkaprava Bhattacharyya -- Analytical modeling of reconfigurable transistors / Ranjith R., Suja K. J., Rama S. Komaragiri -- Flexi-grid technology : a necessity for spectral resource utilization / Divya Sharma, Shivam Singh, Anurag Upadhyay, Sofyan A. Taya
요약 등 주기  
요약"This comprehensive reference text discusses novel semiconductor devices including nanostructure field effect transistor, photodiodes, high-electron-mobility transistor, and oxide-based devices. The text covers sub-micron semiconductor devices, device modeling, novel materials for devices, novel semiconductor devises, optimization techniques and application in detail. It covers important topics including negative capacitance devices, surface-plasmon resonance devices, fermi-level pinning, external stimuli-based optimization techniques, optoelectronic devices, and architecture-based optimization techniques"--해제Provided by publisher.
주제명부출표목-일반주제명  
주제명부출표목-일반주제명  
주제명부출표목-일반주제명  
주제명부출표목-일반주제명  
주제명부출표목-일반주제명  
주제명부출표목-일반주제명  
부출표목-개인명  
부출표목-개인명  
Kumar Naveen , 1993-
    기타형태저록  
    Print version Sub-micron semiconductor devices
    전자적 위치 및 접속  
      링크정보보기

    MARC

     008240109s2022        flu          s          001  0  eng
    ■001on1293450253
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    ■010    ▼a  2021054052
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    ■08204▼a621.3815/2▼223/eng/20220124
    ■090    ▼a전자도서
    ■1001  ▼aRaman,  Ashish▼eeditor.
    ■24510▼aSub-micron  semiconductor  devices  ▼bdesign  and  applications▼h[electronic  resource]▼cedited  by  Ashish  Raman,  Deep  Shekhar  and  Naveen  Kumar.
    ■250    ▼aFirst  edition.
    ■264  1▼aBoca  Raton  ▼bCRC  Press,  Taylor  &  Francis  Group▼c2022.
    ■300    ▼a1  online  resource
    ■336    ▼atext▼btxt▼2rdacontent
    ■337    ▼acomputer▼bc▼2rdamedia
    ■338    ▼aonline  resource▼bcr▼2rdacarrier
    ■504    ▼aIncludes  bibliographical  references  and  index.
    ■5050  ▼aFundamental  phenomena  in  nano  scale  semiconductor  devices  /  Zeinab  Ramezani  and  Arash  Ahmadivand  --  Recent  advancements  in  growth  and  stability  of  phosphorene-prospects  for  high  performance  devices  /  Sushil  Kumar  Pandey,  Vivek  Garg,  Nezhueyotl  Izquierdo,  Amitesh  Kumar  --  Study  of  transition  metal  dichalcogenides  in  junctionless  transistors  and  effect  of  variation  in  dielectric  oxide  /  Prateek  Kumar,  Maneesha  Gupta,  Kunwar  Singh,  Ashok  Kumar  Gupta  --  GNRFET  based  ternary  repeaters  :  prospects  and  potential  implementation  for  efficient  GNR  interconnects  /  Afreen  Khursheed  and  Kavita  Khare  --  An  effective  study  on  particulate  matter  (PM)  removal  using  graphene  filter  /  Katyayani  Bhardwaj,  Aryan  and  Ravindra  Kumar  Yadav  --  Recent  trends  in  fabrication  of  graphene-based  devices  for  detection  of  heavy  metal  ions  in  water  /  Avik  Sett,  Monojit  Mondal,  Santanab  Majumder,  Tarun  Kanti  Bhattacharyya  --  Vertical  tunnel  FET  having  dual  MOSCAP  geometry  /  Vandana  Devi  Wangkheirakpam,  Brinda  Bhowmick,  Puspa  Devi  Pukhrambam  --  Leakage  current  and  capacitance  reduction  in  CMOS  technology  /  Ajay  Somkuwar,  Laxmi  Singh  --  Design  of  SiGe  sourced  gate-all-around  TFET  with  gate-on-source  for  enhanced  analog  performance  /  Navaneet  Kumar  Singh,  Rajib  Kar  and  Durbadal  Mandal  --  Solving  Schrodinger's  equation  for  low  dimensional  nanostructures  for  understanding  quantum  confinement  effects  /  Amit  Kumar  --  Simulation  of  reconfigurable  FET  circuits  using  Sentaurus  TCAD  tool  /  Remya  Jayachandran,  Rama  S  Komaragiri,  K  J  Dhanaraj  --  NEGF  method  for  design  and  simulation  analysis  of  nano-scale  MOS  devices  /  Chhaya  Verma  &  Jeetendra  Singh  --  Performance  investigation  of  a  novel  Si/Ge  heterojunction  asymmetric  doublegate  doping  less  tunnel  field  effect  transistor  for  low-power  analog/RF  and  IoT  applications  /  Suruchi  Sharma,  Rikmantra  Basu,  Baljit  Kaur  --  Synthesis  of  graphene  nanocomposites  toward  the  enhancement  of  energy  storage  performance  for  supercapacitors  /  Monojit  Mondal,  Avik  Sett,  Dipak  Kumar  Goswami,  Tarun  Kanti  Bhattacharyya  --  Design  and  analysis  of  dopingless  charge  plasma  based  ring  architecture  of  tunnel  field  effect  transistor  for  low  power  application  /  Ashok  Kumar  Gupta,  Ashish  Raman,  Prateek  Kumar,  Naveen  Kumar,  Deep  Shekhar  --  Hybrid  intelligent  technique  based  doping  profile  optimization  in  a  double  gate  heterdielectric  TFET  /  Sagarika  Choudhury,  Krishna  Lal  Baishnab,  Brinda  Bhowmick,  Koushik  Guha  --  Graphene  nanoribbon  devices  :  advances  in  fabrication  and  applications  /  Juan  M.  Marmolejo-Tejada,  Jaime  Velasco-Medina,  Andres  Jaramillo-Botero  --  Design  and  analysis  of  various  neural  preamplifier  circuits  /  Swagata  Devi,  Koushik  Guha,  Krishna  Lal  Baishnab  --  Design  and  analysis  of  transition  metal  dichalcogenides  based  feedback  transistor  /  Prateek  Kumar,  Maneesha  Gupta,  Kunwar  Singh,  Ashok  Kumar  Gupta,  Naveen  Kumar  --  Reduced  graphene-metal  phthalocyanine  based  nanohybrids  for  gas  sensing  applications  /  Aman  Mahajan,  Manreet  Kaur  Sohal  --  Phosphorene  multigate  field-effect  transistors  for  high-frequency  applications  /  R.  Ramesh,  Adhithan  Pon,  Arkaprava  Bhattacharyya  --  Analytical  modeling  of  reconfigurable  transistors  /  Ranjith  R.,  Suja  K.  J.,  Rama  S.  Komaragiri  --  Flexi-grid  technology  :  a  necessity  for  spectral  resource  utilization  /  Divya  Sharma,  Shivam  Singh,  Anurag  Upadhyay,  Sofyan  A.  Taya
    ■520    ▼a"This  comprehensive  reference  text  discusses  novel  semiconductor  devices  including  nanostructure  field  effect  transistor,  photodiodes,  high-electron-mobility  transistor,  and  oxide-based  devices.  The  text  covers  sub-micron  semiconductor  devices,  device  modeling,  novel  materials  for  devices,  novel  semiconductor  devises,  optimization  techniques  and  application  in  detail.  It  covers  important  topics  including  negative  capacitance  devices,  surface-plasmon  resonance  devices,  fermi-level  pinning,  external  stimuli-based  optimization  techniques,  optoelectronic  devices,  and  architecture-based  optimization  techniques"--▼cProvided  by  publisher.
    ■588    ▼aDescription  based  on  print  version  record  and  CIP  data  provided  by  publisher.
    ■590    ▼aOCLC  control  number  change
    ■650  0▼aSemiconductors.
    ■650  0▼aNanoelectronics.
    ■650  0▼aMicroelectronics.
    ■650  7▼aMicroelectronics.▼2fast▼0(OCoLC)fst01019757
    ■650  7▼aNanoelectronics.▼2fast▼0(OCoLC)fst01741867
    ■650  7▼aSemiconductors.▼2fast▼0(OCoLC)fst01112198
    ■7001  ▼aShekhar,  Deep▼eeditor.
    ■7001  ▼aKumar,  Naveen▼d1993-▼eeditor.
    ■77608▼iPrint  version▼tSub-micron  semiconductor  devices▼bFirst  edition.▼dBoca  Raton  :  CRC  Press,  Taylor  &  Francis  Group,  2022▼z9780367648091▼w(DLC)    2021054051
    ■85640▼3EBSCOhost▼uhttps://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&db=nlabk&AN=3215631
    ■938    ▼aEBSCOhost▼bEBSC▼n3215631
    ■994    ▼a92▼bN$T

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